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參數(shù)資料
| 型號： | 930105202 |
| 廠商： | ATMEL CORP |
| 元件分類： | SRAM |
| 英文描述： | 512K X 8 STANDARD SRAM, 15 ns, DFP36 |
| 封裝： | 0.500 INCH, DFP-36 |
| 文件頁數(shù)： | 1/14頁 |
| 文件大小： | 349K |
| 代理商： | 930105202 |
1
4408H–AERO–05/10
Features
Operating Voltage: 3.3V
Access Time:
– 15 ns (AT60142F)
Very Low Power Consumption
– Active: 650 mW (Max) @ 15 ns, 540 mW (Max) @ 25 ns
– Standby: 3.3 mW (Typ)
Wide Temperature Range: -55 to +125°C
TTL-Compatible Inputs and Outputs
Asynchronous
Designed on 0.25 m Radiation Hardened Process
No Single Event Latch Up below LET Threshold of 80 MeV/mg/cm2@125°C
Tested up to a Total Dose of 300 krads (Si) according to MIL-STD-883 Method 1019
500 Mils Wide FP36 Package
ESD Better than 4000V
Quality Grades: ESCC with 9301/052, QML-Q or V with smd 5962-05208
Description
The AT60142F is a very low power CMOS static RAM organized as 524 288 x 8 bits.
Atmel brings the solution to applications where fast computing is as mandatory as low
consumption, such as aerospace electronics, portable instruments, or embarked
systems.
Utilizing an array of six transistors (6T) memory cells, the AT60142F combines an
extremely low standby supply current (Typical value = 1 mA) with a fast access time at
15 ns or better over the full military temperature range. The high stability of the 6T cell
provides excellent protection against soft errors due to noise.
The AT60142F is processed according to the methods of the latest revision of the MIL
PRF 38535 or ESCC 9000.
It is produced on a radiation hardened 0.25 m CMOS process.
Rad Hard
512K x 8
Very Low Power
CMOS SRAM
AT60142F
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