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參數(shù)資料
| 型號： | 933063420126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 54K |
| 代理商： | 933063420126 |
1997 Jul 07
3
Philips Semiconductors
Product specication
NPN medium frequency transistor
BF199
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
25
V
VEBO
emitter-base voltage
open collector
4V
IC
collector current (DC)
25
mA
ICM
peak collector current
25
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
500
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =40V
100
nA
IEBO
emitter cut-off current
IC = 0; VEB =4V
100
nA
hFE
DC current gain
IC = 7 mA; VCE =10V
38
VBE
base-emitter voltage
IC = 7 mA; VCE =10V
775
925
mV
Cre
feedback capacitance
IC = 0; VCB =10V; f=1MHz
0.5
pF
fT
transition frequency
IC = 5 mA; VCE = 10 V; f = 100 MHz
550
MHz
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