參數(shù)資料
型號: 933082731235
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SST3, SMD, 3 PIN
文件頁數(shù): 3/8頁
文件大小: 42K
代理商: 933082731235
1999 Apr 13
3
Philips Semiconductors
Product specication
PNP general purpose transistors
BCW29; BCW30
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 32 V
100 nA
IE = 0; VCB = 32 V; Tj = 100 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
100 nA
hFE
DC current gain
IC = 10 A; VCE = 5V
BCW29
90
BCW30
150
DC current gain
IC = 2 mA; VCE = 5V
BCW29
120
260
BCW30
215
500
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
80
300 mV
IC = 50 mA; IB = 2.5 mA
150
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
720
mV
IC = 50 mA; IB = 2.5 mA
810
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5V
600 750 mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
4.5
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz 100
MHz
F
noise gure
IC = 200 A; VCE = 5 V; RS =2k;
f = 1 kHz; B = 200 Hz
10
dB
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