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2000 Jul 04
2
Philips Semiconductors
Product specication
NPN general purpose transistors
BCW31; BCW32; BCW33
FEATURES
Low current (100 mA)
Low voltage (32 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistors in a plastic SOT23 package.
PNP complements: BCW29 and BCW30.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
PINNING
TYPE NUMBER
MARKING CODE(1)
BCW31
D1
BCW32
D2
BCW33
D3
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
32
V
VCEO
collector-emitter voltage
open base; IC =2mA
32
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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| 933082791235 | 100 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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| 933083001 | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TESTCLIP MIT MESSLEITUNG SO IC 20POL |
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