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參數(shù)資料
| 型號(hào)： | 933092111235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 41K |
| 代理商： | 933092111235 |
1999 Apr 15
2
Philips Semiconductors
Product specication
NPN medium frequency transistor
BFS20
FEATURES
Low current (max. 25 mA)
Low voltage (max. 20 V)
Very low feedback capacitance (typ. 350 fF).
APPLICATIONS
IF and VHF applications in thick and thin-film circuits.
DESCRIPTION
NPN medium frequency transistor in a SOT23 plastic
package.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
BFS20
G1
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
30
V
VCEO
collector-emitter voltage
open base
20
V
VEBO
emitter-base voltage
open collector
4V
IC
collector current (DC)
25
mA
ICM
peak collector current
25
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
250
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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