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參數(shù)資料
| 型號(hào)： | 933099000215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 45K |
| 代理商： | 933099000215 |
1999 Apr 15
3
Philips Semiconductors
Product specication
NPN switching transistor
BSV52
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =20V
400
nA
IE = 0; VCB =20V; Tj = 125 °C
30
A
IEBO
emitter cut-off current
IC = 0; VEB =4V
100
nA
hFE
DC current gain
VCE =1V
IC = 1 mA
25
IC =10mA
40
120
IC =50mA
25
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 300 A
300
mV
IC = 10 mA; IB =1mA
250
mV
IC = 50 mA; IB =5mA
400
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
700
850
mV
IC = 50 mA; IB =5mA
1.2
V
Cc
collector capacitance
IE =ie = 0; VCB =5V; f=1MHz
4pF
Ce
emitter capacitance
IC =ic = 0; VEB = 1 V; f = 1 MHz
4.5
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz 400
500
MHz
Switching times (between 10% and 90% levels); (see Fig.2)
ton
turn-on time
ICon = 10 mA; IBon = 3 mA;
IBoff = 1.5 mA
10
ns
td
delay time
4ns
tr
rise time
6ns
toff
turn-off time
20
ns
ts
storage time
10
ns
tf
fall time
10
ns
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