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參數(shù)資料
| 型號： | 933114330112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, TO-92 VARIANT, 3 PIN |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 129K |
| 代理商： | 933114330112 |
1996 Jul 30
3
Philips Semiconductors
Product specication
N-channel silicon eld-effect transistors
BF245A; BF245B; BF245C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm
× 10 mm.
THERMAL CHARACTERISTICS
STATIC CHARACTERISTICS
Tj =25 °C; unless otherwise specified.
Note
1. Measured under pulse conditions: tp = 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
±30
V
VGDO
gate-drain voltage
open source
30
V
VGSO
gate-source voltage
open drain
30
V
ID
drain current
25
mA
IG
gate current
10
mA
Ptot
total power dissipation
up to Tamb =75 °C;
300
mW
up to Tamb =90 °C; note 1
300
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air
250
K/W
thermal resistance from junction to ambient
200
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V(BR)GSS
gate-source breakdown voltage
IG = 1 A; VDS =0
30
V
VGSoff
gate-source cut-off voltage
ID = 10 nA; VDS =15V
0.25
8.0
V
VGS
gate-source voltage
ID = 200 A; VDS =15V
BF245A
0.4
2.2
V
BF245B
1.6
3.8
V
BF245C
3.2
7.5
V
IDSS
drain current
VDS =15V; VGS = 0; note 1
BF245A
2
6.5
mA
BF245B
6
15
mA
BF245C
12
25
mA
IGSS
gate cut-off current
VGS = 20 V; VDS =0
5nA
VGS = 20 V; VDS = 0; Tj = 125 °C
0.5
A
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