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參數(shù)資料
| 型號： | 933197710112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | PLASTIC, SPT, SC-43, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 933197710112 |
1999 Apr 15
3
Philips Semiconductors
Product specication
PNP general purpose transistors
BC556; BC557
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
250
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
1
15
nA
IE = 0; VCB = 30 V; Tj = 150 °C
4
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
100 nA
hFE
DC current gain
IC = 2 mA; VCE = 5V;
see Figs 2, 3 and 4
BC556
125
475
BC557
125
800
BC556A
125
250
BC556B; BC557B
220
475
BC557C
420
800
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
60
300 mV
IC = 100 mA; IB = 5mA
180 650 mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA; note 1
750
mV
IC = 100 mA; IB = 5 mA; note 1
930
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V; note 2
600 650 750 mV
IC = 10 mA; VCE = 5 V; note 2
820 mV
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
3
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
10
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz 100
MHz
F
noise gure
IC = 200 A; VCE = 5 V; RS =2k;
f = 1 kHz; B = 200 Hz
210
dB
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