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參數(shù)資料
| 型號(hào)： | 933272330115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-243AA |
| 封裝： | PLASTIC, MPT3, SMD, SC-62, UPAK-3 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | 933272330115 |
Philips Semiconductors
BUK95/96/9E04-40A
TrenchMOS logic level FET
Product data
Rev. 01 — 24 October 2001
5 of 15
9397 750 08649
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C40
-
V
Tj = 55 °C36
-
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS = 40 V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS = 0 V
-
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =25A;
Tj =25 °C
-
3.5
4.4
m
Tj = 175 °C
-
8.3
m
VGS = 4.3 V; ID = 25 A
-
3.7
5.9
m
VGS =10V; ID = 25 A
-
2.9
4
m
Dynamic characteristics
Qg(tot)
total gate charge
VGS =5V;VDD =32V;
-
128
-
nC
Qgs
gate-to-source charge
-
13
-
nC
Qgd
gate-to-drain (Miller) charge
-
56
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
-
6200
8260
pF
Coss
output capacitance
-
1040
1250
pF
Crss
reverse transfer capacitance
-
680
940
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
-62
-
ns
tr
rise time
-
309
-
ns
td(off)
turn-off delay time
-
365
-
ns
tf
fall time
-
306
-
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
-
4.5
-
nH
from contact screw on
mounting base to centre of
die SOT78
-
3.5
-
nH
from upper edge of drain
mounting base to centre of
die SOT404 / SOT226
-
2.5
-
nH
Ls
internal source inductance
from source lead to source
bond pad
-
7.5
-
nH
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