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參數(shù)資料
| 型號(hào)： | 933298820113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 齊納二極管 |
| 英文描述： | 2.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS, SC-40, 2 PIN |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大小： | 61K |
| 代理商： | 933298820113 |
2002 Feb 27
7
Philips Semiconductors
Product specication
Voltage regulator diodes
BZX79 series
Fig.3
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
handbook, halfpage
MBG801
103
1
duration (ms)
PZSM
(W)
10
102
101
10
1
(1)
(2)
(1) Tj =25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Fig.4
Typical forward current as a function of
forward voltage.
handbook, halfpage
0.6
1.0
300
100
0
200
MBG781
0.8
VF (V)
IF
(mA)
Tj =25 °C.
Fig.5
Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
060
0
2
3
1
MBG783
20
40
IZ (mA)
SZ
(mV/K)
4V3
3V9
3V6
3V0
2V4
2V7
3V3
BZX79-B/C2V4 to BZX79-B/C4V3.
Tj =25to150 °C.
Fig.6
Temperature coefficient as a function of
working current; typical values.
handbook, halfpage
020
16
10
0
5
MBG782
48
12
IZ (mA)
SZ
(mV/K)
4V7
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
BZX79-B/C4V7 to BZX79-B/C12.
Tj =25to150 °C.
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