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參數(shù)資料
| 型號： | 933410720215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 56K |
| 代理商： | 933410720215 |
December 1997
2
Philips Semiconductors
Product specication
N-channel silicon FET
BFT46
DESCRIPTION
Symmetrical n-channel silicon
epitaxial planar junction field-effect
transistor in a microminiature plastic
envelope. The transistor is intended
for low level general purpose
amplifiers in thick and thin-film
circuits.
PINNING
Note : Drain and source are
interchangeable.
1 = drain
2 = source
3 = gate
Marking code
BFT46 = M3p
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
Drain-source voltage
±VDS
max.
25 V
Gate-source voltage (open drain)
V
GSO
max.
25 V
Total power dissipation up to Tamb =40 °CPtot
max.
250 mW
Drain current
VDS = 10 V; VGS =0
IDSS
>
0,2 mA
<
1,5 mA
Transfer admittance (common source)
ID = 0,2 mA; VDS = 10 V; f = 1 kHz
yfs >
0,5 mS
Equivalent noise voltage
VDS = 10 V; ID = 200 A; B = 0,6 to 100 Hz
Vn
<
0,5
V
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