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| 型號(hào)： | 933410750215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 933410750215 |
April 1991
2
Philips Semiconductors
Product specication
N-channel FETs
BSR56; BSR57; BSR58
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors in a plastic microminiature
envelope intended for application in
thick and thin-film circuits. The
transistors are intended for
low-power, chopper or switching
applications in industrial service.
PINNING
Note
1. Drain and source are
interchangeable.
Marking code
1
= drain
2
= source
3
= gate
BSR56 = M4P
BSR57 = M5P
BSR58 = M6P
Fig.1 Simplified outline and symbol, SOT23.
handbook, halfpage
12
g
d
s
3
Top view
MAM385
QUICK REFERENCE DATA
BSR56
BSR57
BSR58
Drain-source voltage
±V
DS
max.
40
40 V
Total power dissipation up to Tamb = 40 °CPtot
max.
250
250 mW
Drain current
VDS = 15 V; VGS =0
IDSS
>
50
20
8 mA
<
100
80 mA
Gate-source cut-off voltage
VDS = 15 V; ID = 0.5 nA
V(P)GS
>
4
2
0.8 V
<
10
6
4 V
Drain-source resistance (on) at f = 1 kHz
ID = 0; VGS =0
rds on
<
25
40
60
Feedback capacitance at f = 1 MHz
VGS = 10 V; VDS =0
Crs
<
55
5 pF
Turn-off time
VDD = 10 V; VGS =0
ID = 20 mA; VGSM = 10 V
toff
<
25
ns
ID = 10 mA; VGSM =6 V
toff
<
50
ns
ID = 5 mA; VGSM =4 V
toff
<
100 ns
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