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參數資料
| 型號： | 933410760215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數： | 3/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 933410760215 |
April 1991
3
Philips Semiconductors
Product specication
N-channel FETs
BSR56; BSR57; BSR58
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Notes
1. Mounted on a ceramic substrate of 8 mm
× 10 mm × 0.7 mm.
CHARACTERISTICS
Tj =25 °C unless otherwise specied
Drain-source voltage
± V
DS
max.
40 V
Drain-gate voltage
VDGO
max.
40 V
Gate-source voltage
V
GSO
max.
40 V
Forward gate current
IGF
max.
50 mA
Total power dissipation up to Tamb =40 °C (note 1)
Ptot
max.
250 mW
Storage temperature range
Tstg
65 to +150 °C
Junction temperature
Tj
max.
150
°C
From junction to ambient (note 1)
Rth j-a
=
430 K/W
Gate-source cut-off current
VDS =0V; VGS =20V
IGSS
max.
1.0 nA
Drain cut-off current
VDS =15V; VGS = 10 V
IDSX
max.
1.0 nA
BSR56
BSR57
BSR58
Drain current
VDS = 15 V; VGS =0
IDSS
>
50
20
8 mA
<
100
80 mA
Gate-source breakdown voltage
I
G =1 A; VDS =0
V(BR)GSS
>
40
40 V
Gate-source cut-off voltage
ID = 0,5 nA; VDS = 15 V
V(P)GS
>
4
2
0.8 V
<
10
6
4 V
Drain-source voltage (on)
ID = 20 mA; VGS =0
VDSon
<
750
mV
ID = 10 mA; VGS =0
VDSon
<
500
mV
ID = 5 mA; VGS =0
VDSon
<
400 mV
Drain-source resistance (on) at f = 1 kHz
ID = 0; VGS = 0; Ta =25 °Crds on
<
25
40
60
Feedback capacitance at f = 1 MHz
V
GS = 10 V; VDS =0
Crss
<
55
5 pF
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