參數資料
型號: 933418060215
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝: PLASTIC, SMD, 4 PIN
文件頁數: 2/8頁
文件大小: 48K
代理商: 933418060215
April 1991
2
Philips Semiconductors
Product specication
MOSFET N-channel enhancement switching transistor
BSS83
DESCRIPTION
Symmetrical insulated-gate silicon
MOS field-effect transistor of the
N-channel enhancement mode type.
The transistor is sealed in a SOT143
envelope and features a low ON
resistance and low capacitances. The
transistor is protected against
excessive input voltages by
integrated back-to-back diodes
between gate and substrate.
APPLICATIONS
analog and/or digital switch
switch driver
PINNING
Note
1. Drain and source are
interchangeable.
1
=
substrate (b)
2
=
source
3
=
drain
4
=
gate
Marking code:
BSS83 = M74
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM389
Top view
g
d
b
s
2
1
3
4
QUICK REFERENCE DATA
Drain-source voltage
VDS
max.
10 V
Source-drain voltage
VSD
max.
10 V
Drain-substrate voltage
VDB
max.
15 V
Source-substrate voltage
VSB
max.
15 V
Drain current (DC)
ID
max.
50 mA
Total power dissipation up to Tamb =25 °CPtot
max.
230 mW
Gate-source threshold voltage
VDS =VGS;VSB =0;
VGS(th)
>
0.1 V
ID =1 A
<
2.0 V
Drain-source ON-resistance
VGS = 10 V; VSB = 0; ID = 0.1 mA
RDSon
<
45
Feed-back capacitance
VGS =VBS = 15 V;
VDS = 10 V; f = 1 MHz
Crss
typ.
0.6 pF
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