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參數(shù)資料
| 型號(hào)： | 933418060235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 50 mA, 10 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 48K |
| 代理商： | 933418060235 |
April 1991
4
Philips Semiconductors
Product specication
MOSFET N-channel enhancement switching transistor
BSS83
CHARACTERISTICS
Tamb =25 °C unless otherwise specied
Note
1. Device mounted on a ceramic substrate of 8 mm
× 10 mm × 0,7 mm.
Drain-source breakdown voltage
VGS =VBS = 5 V; ID = 10 nA
V(BR)DSX
>
10 V
Source-drain breakdown voltage
VGD =VBD = 5 V; ID = 10 nA
V(BR)SDX
>
10 V
Drain-substrate breakdown voltage
VGB = 0; ID = 10 nA; open source
V(BR)DBO
>
15 V
Source-substrate breakdown voltage
VGB = 0; ID = 10 nA; open drain
V(BR)SBO
>
15 V
Drain-source leakage current
VGS =VBS = 2 V; VDS = 6,6 V
IDSoff
<
10 nA
Source-drain leakage current
VGD =VBD = 2 V; VSD = 6,6 V
ISDoff
<
10 nA
Forward transconductance at f = 1 kHz
VDS = 10 V; VSB = 0; ID = 20 mA
gfs
>
10 mS
typ.
15 mS
Gate-source threshold voltage
VDS =VGS; VSB = 0; ID = 1 A
VGS(th)
>
0,1 V
<
2,0 V
Drain-source ON-resistance
ID = 0,1 mA;
VGS = 5 V; VSB =0
RDSon
<
70
VGS = 10 V; VSB =0
RDSon
<
45
VGS = 3,2 V; VSB = 6,8 V (see Fig.4)
RDSon
typ.
80
<
120
Gate-substrate zener voltages
VDB =VSB =0; IG =10 AVZ(1)
>
12,5 V
VDB =VSB =0; +IG =10 AVZ(2)
>
12,5 V
Capacitances at f = 1 MHz
VGS =VBS = 15 V; VDS = 10 V
Feed-back capacitance
Crss
typ.
0,6 pF
Input capacitance
Ciss
typ.
1,5 pF
Output capacitance
Coss
typ.
1,0 pF
Switching times (see Fig.2)
VDD = 10 V; Vi =5 V
ton
typ.
1,0 ns
toff
typ.
5,0 ns
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