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參數(shù)資料
| 型號： | 933450430115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, UPAK-3 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 933450430115 |
September 1995
2
Philips Semiconductors
Product specication
NPN 4 GHz wideband transistor
BFQ18A
DESCRIPTION
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
PINNING
PIN
DESCRIPTION
Code: FF
1
emitter
2
collector
3
base
Fig.1 SOT89.
page
12
3
Bottom view
MBK514
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
TYP. MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
V
VCEO
collector-emitter voltage
open base
18
V
IC
DC collector current
150
mA
Ptot
total power dissipation
up to Ts = 155 °C (note 1)
1W
fT
transition frequency
IC = 100 mA; VCE = 10 V; f = 500 MHz;
Tj = 25 °C
4
GHz
Cre
feedback capacitance
IC = 0; VCE = 10 V; f = 10.7 MHz
1.2
pF
dim
intermodulation distortion
IC = 80 mA; VCE = 10 V; RL =75 ;
Vo = 700 mV; measured at
f(p+q-r) = 793.25 MHz
60
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
V
VCEO
collector-emitter voltage
open base
18
V
VEBO
emitter-base voltage
open collector
2V
IC
DC collector current
150
mA
Ptot
total power dissipation
up to Ts = 155 °C (note 1)
1W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
175
°C
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