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參數(shù)資料
| 型號： | 933543490113 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.3 A, 50 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 116K |
| 代理商： | 933543490113 |
1997 Nov 24
4
Philips Semiconductors
Product specication
Ultra fast low-loss
controlled avalanche rectiers
BYV27 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig. 25.
For more information please refer to the
“General Part of associated Handbook”.
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A;
see Fig. 27
BYV27-50 to 200
25
ns
BYV27-300 to 600
50
ns
Cd
diode capacitance
f = 1 MHz; VR =0;
see Figs 22, 23 and 24
BYV27-50 to 200
100
pF
BYV27-300 and 400
80
pF
BYV27-500 and 600
65
pF
maximum slope of reverse recovery
current
when switched from
IF = 1 A to VR ≥ 30 V
and dIF/dt = 1A/s;
see Fig. 26
4A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
46
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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