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參數(shù)資料
| 型號： | 933543500163 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 1.3 A, 100 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 10/16頁 |
| 文件大?。?/td> | 116K |
| 代理商： | 933543500163 |
1997 Nov 24
3
Philips Semiconductors
Product specication
Ultra fast low-loss
controlled avalanche rectiers
BYV27 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
IFRM
repetitive peak forward current
Ttp =85 °C; see Figs 8, 9 and 10
BYV27-50 to 400
20
A
BYV27-500 and 600
16
A
IFRM
repetitive peak forward current
Tamb =60 °C;
see Figs 11, 12 and 13
BYV27-50 to 200
14
A
BYV27-300 and 400
13
A
BYV27-500 and 600
11
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave;
Tj =Tj max prior to surge;
VR =VRRMmax
BYV27-50 to 400
50
A
BYV27-500 and 600
40
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
20
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig. 17
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 2 A; Tj =Tj max;
see Figs 18, 19 and 20
BYV27-50 to 200
0.78
V
BYV27-300 and 400
0.82
V
BYV27-500 and 600
1.00
V
VF
forward voltage
IF =2A;
see Figs 18, 19 and 20
BYV27-50 to 200
0.98
V
BYV27-300 and 400
1.05
V
BYV27-500 and 600
1.25
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYV27-50
55
V
BYV27-100
110
V
BYV27-150
165
V
BYV27-200
220
V
BYV27-300
330
V
BYV27-400
440
V
BYV27-500
560
V
BYV27-600
675
V
IR
reverse current
VR =VRRMmax;
see Fig. 21
5
A
VR =VRRMmax;
Tj = 165 °C; see Fig. 21
150
A
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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