參數(shù)資料
型號: 933644300115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 500 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-243AA
封裝: PLASTIC, MPT3, SMD, SC-62, UPAK-3
文件頁數(shù): 4/8頁
文件大?。?/td> 48K
代理商: 933644300115
2001 Feb 20
4
Philips Semiconductors
Product specication
PNP Darlington transistors
BST60; BST61; BST62
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
96
K/W
Rth j-s
thermal resistance from junction to soldering point
16
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICES
collector cut-off current
BST60
VBE = 0; VCE = 45 V
50
nA
BST61
VBE = 0; VCE = 60 V
50
nA
BST62
VBE = 0; VCE = 80 V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 4V
50
nA
hFE
DC current gain
VCE = 10 V; note 1; see Fig.2
IC = 150 mA
1000
IC = 500 mA
2000
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB = 0.5 mA
1.3
V
IC = 500 mA; IB = 0.5 mA; Tj = 150 °C 1.3
V
VBEsat
base-emitter saturation
voltage
IC = 500 mA; IB = 0.5 mA
1.9
V
fT
transition frequency
IC = 500 mA; VCE = 5 V; f = 100 MHz
200
MHz
Switching times (between 10% and 90% levels); see Fig.3
ton
turn-on time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = 0.5 mA
500
ns
toff
turn-off time
700
ns
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