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參數(shù)資料
| 型號(hào)： | 933659260115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, MPT3, SMD, UPAK-3 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 40K |
| 代理商： | 933659260115 |
1999 Apr 21
3
Philips Semiconductors
Product specication
NPN high-voltage transistors
BF620; BF622
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
100
K/W
Rth j-s
thermal resistance from junction to soldering point
20
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 200 V
10
nA
IE = 0; VCB = 200 V; Tj = 150 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB =5V
50
nA
hFE
DC current gain
IC = 25 mA; VCE =20V
50
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB =5mA
600
mV
Cre
feedback capacitance
IC =ic = 0; VCE = 30 V; f = 1 MHz
1.6
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V; f = 100 MHz 60
MHz
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