參數(shù)資料
型號(hào): 933663090115
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Si, POWER TRANSISTOR, TO-243AA
封裝: PLASTIC, MPT3, SMD, SC-62, UPAK-3
文件頁數(shù): 7/8頁
文件大?。?/td> 46K
代理商: 933663090115
Philips Semiconductors
BUK95/96/9E04-40A
TrenchMOS logic level FET
Product data
Rev. 01 — 24 October 2001
7 of 15
9397 750 08649
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C; VDS =VGS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS =25V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (
oC)
VGS(th)
(V)
max
typ
min
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0
0.5
1
1.5
2
2.5
3
VGS (V)
ID
(A)
max
typ
min
03nd92
0
20
40
60
80
100
0
20406080
ID (A)
gfs
(S)
03nd97
0
2000
4000
6000
8000
10000
12000
14000
10-2
10-1
1
10
102
VDS (V)
C (pF)
Ciss
Coss
Crss
相關(guān)PDF資料
PDF描述
933272330115 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-243AA
933674760115 1 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-243AA
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