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參數(shù)資料
| 型號(hào)： | 933665130235 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 50 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | 933665130235 |
1999 Apr 15
3
Philips Semiconductors
Product specication
PNP high-voltage transistors
BF821; BF823
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 200 V
10
nA
IE = 0; VCB = 200 V; Tj = 150 °C
10
A
IEBO
emitter cut-off current
IC = 0; VEB = 5V
50
nA
hFE
DC current gain
IC = 25 mA; VCE = 20 V
50
VCEsat
collector-emitter saturation voltage
IC = 30 mA; IB = 5mA
800
mV
Cre
feedback capacitance
IC =ic = 0; VCB = 30 V; f = 1 MHz
1.6
pF
fT
transition frequency
IC = 10 mA; VCE = 10 V;
f = 100 MHz
60
MHz
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