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參數(shù)資料
| 型號(hào)： | 933665440127 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大小： | 97K |
| 代理商： | 933665440127 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
IRF630, IRF630S
Fig.13. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.14. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tAV);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
0.1
1
10
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
August 1999
6
Rev 1.100
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