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參數(shù)資料
| 型號(hào)： | 933668920652 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 門電路 |
| 英文描述： | HCT SERIES, TRIPLE 3-INPUT NAND GATE, PDIP14 |
| 封裝： | DIP-14 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 32K |
| 代理商： | 933668920652 |
December 1990
2
Philips Semiconductors
Product specication
Triple 3-input NAND gate
74HC/HCT10
FEATURES
Output capability: standard
ICC category: SSI
GENERAL DESCRIPTION
The 74HC/HCT10 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL).
They are specified in compliance with JEDEC standard no. 7A.
The 74HC/HCT10 provide the 3-input NAND function.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf = 6 ns
Notes
1. CPD is used to determine the dynamic power dissipation (PD in W):
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fO) where:
fi = input frequency in MHz
fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in V
∑ (CL × VCC2 × fo) = sum of outputs
2. For HC the condition is VI = GND to VCC
For HCT the condition is VI = GND to VCC 1.5 V.
ORDERING INFORMATION
See
“74HC/HCT/HCU/HCMOS Logic Package Information”.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC
HCT
tPHL/ tPLH
propagation delay nA, nB, nC to nY
CL = 15 pF; VCC =5V
9
11
ns
CI
input capacitance
3.5
pF
CPD
power dissipation capacitance per gate
notes 1 and 2
12
14
pF
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