參數(shù)資料
型號(hào): 933674760135
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Si, POWER TRANSISTOR, TO-243AA
封裝: PLASTIC, MPT3, SMD, SC-62, UPAK-3
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 46K
代理商: 933674760135
Philips Semiconductors
BUK95/96/9E04-40A
TrenchMOS logic level FET
Product data
Rev. 01 — 24 October 2001
3 of 15
9397 750 08649
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
VGS ≥ 4.5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Continuous drain current as a function of
mounting base temperature.
Tmb =25 °C; IDM single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03na19
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
200
Pder
(%)
Tmb (C)
03ne93
0
50
100
150
200
25
50
75
100
125
150
175
200
Tmb (C)
ID
(A)
Capped at 75 A due to package
P
der
P
tot
P
tot 25 C
°
()
-----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ne68
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
RDSon = VDS / ID
1 ms
tp = 10 s
100 s
Capped at 75 A due to package
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933674740135 Si, POWER TRANSISTOR, TO-243AA
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