參數(shù)資料
型號(hào)： 933714500653
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 算術(shù)邏輯單元
英文描述： HC/UH SERIES, 9-BIT ENCODER, PDSO16
封裝： PLASTIC, SO-16
文件頁(yè)數(shù)： 5/7頁(yè)
文件大?。?/td> 43K
代理商： 933714500653
Philips Semiconductors
PHD95N03LT
TrenchMOS logic level FET
Product data
Rev. 02 — 8 February 2002
5 of 12
9397 750 09286
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
25
--V
Tj = 55 °C
22
--V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS =25V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±5 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
VGS =5V; ID =25A; Figure 7 and 8
Tj =25 °C
-
7.5
9
m
Tj = 175 °C
-
13
15.5
m
VGS =10V; ID =25A; Figure 7 and 8
Tj =25 °C
-
57m
Dynamic characteristics
gfs
forward transconductance
VDS =25V; ID =50A
-
50
-
S
Qg(tot)
total gate charge
ID = 50 A; VDD =12V; VGS = 4.5 V;
-43
-
nC
Qgs
gate-source charge
-
12
-
nC
Qgd
gate-drain (Miller) charge
-
16
-
nC
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz; Figure 11
-
2200 -
pF
Coss
output capacitance
-
770
-
pF
Crss
reverse transfer capacitance
-
500
-
pF
td(on)
turn-on delay time
VDD =15V; ID = 15 A; VGS =10V;
RG =6 ; resistive load
-
1020ns
tr
turn-on rise time
-
30
50
ns
td(off)
turn-off delay time
-
110
140
ns
tf
turn-off fall time
-
80
100
ns
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12
-
0.85
1.2
V
IS =40A;VGS =0V; Figure 12
-
0.9
-
V
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