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參數(shù)資料
| 型號： | 933773790215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | PLASTIC, SMD, SST3, 3 PIN |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 933773790215 |
April 1995
3
Philips Semiconductors
Product specication
N-channel FETs
PMBF4391; PMBF4392;
PMBF4393
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
CHARACTERISTICS
Tj =25 °C unless otherwise specied
Drain-source voltage
± V
DS
max.
40 V
Drain-gate voltage
VDGO
max.
40 V
Gate-source voltage
V
GSO
max.
40 V
Gate current (DC)
IG
max.
50 mA
Total power dissipation up to Tamb =40 °C (1)
Ptot
max.
250 mW
Storage temperature range
Tstg
65 to + 150 °C
Junction temperature
Tj
max.
150
°C
From junction to ambient(1)
Rth j-a
=
430 K/W
Gate-source voltage
IG = 1 mA; VDS = 0
VGSon
<
1V
Gate-source cut-off current
VDS = 0 V; VGS = 20 V
IGSS
<
0.1 nA
VDS = 0 V; VGS = 20 V; Tamb = 150 °C
IGSS
<
0.2
A
PMBF4391
PMBF4392
PMBF4393
Drain current
VDS = 20 V; VGS =0
IDSS
>
<
50
150
25
75
5
30
mA
Gate-source breakdown voltage
IG =1 A; VDS =0
V(BR)GSS
>
40
40 V
Gate-source cut-off voltage
ID = 1 nA; VDS = 20 V
V(P)GS
>
<
4
10
2
5
0.5
3
V
Drain-source voltage (on)
ID = 12 mA; VGS =0
VDSon
<
0.4
V
ID = 6 mA; VGS =0
VDSon
<
0.4
V
ID = 3 mA; VGS =0
VDSon
<
0.4 V
Drain-source resistance (on)
ID = 0; VGS = 0; f = 1 kHz; Tamb =25 °Crds on
<
30
100
Drain cut-off current
VGS = 12 V
VDS = 20 V
IDSX
<
0.1
nA
V
GS =7 V
IDSX
<
0.1
nA
V
GS =5 V
IDSX
<
0.1 nA
VGS = 12 V
VDS = 20 V; Tamb = 150 °C
IDSX
<
0.2
A
VGS =7 V
IDSX
<
0.2
A
V
GS =5 V
IDSX
<
0.2
A
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