參數(shù)資料
型號(hào)： 933776010215
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 小信號(hào)晶體管
英文描述： 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
文件頁(yè)數(shù)： 4/10頁(yè)
文件大?。?/td> 81K
代理商： 933776010215
1999 Apr 27
3
Philips Semiconductors
Product specication
PNP switching transistor
PMBT3906
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 30 V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB = 6V
50
nA
hFE
DC current gain
VCE = 1 V; (see Fig.2)
IC = 0.1 mA
60
IC = 1mA
80
IC = 10 mA
100
300
IC = 50 mA
60
IC = 100 mA
30
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 1mA
200
mV
IC = 50 mA; IB = 5mA
200
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1mA
850
mV
IC = 50 mA; IB = 5mA
950
mV
Cc
collector capacitance
IE =ie = 0; VCB = 5 V; f = 1 MHz
4.5
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 500 mV; f = 1 MHz
10
pF
fT
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz
250
MHz
F
noise gure
IC = 100 A; VCE = 5 V; RS =1k;
f = 10 Hz to 15.7 kHz
4dB
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
ICon = 10 mA; IBon = 1 mA; IBoff =1mA
65
ns
td
delay time
35
ns
tr
rise time
35
ns
toff
turn-off time
300
ns
ts
storage time
225
ns
tf
fall time
75
ns
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933776020215 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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