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參數(shù)資料
| 型號(hào)： | 933779950112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 73K |
| 代理商： | 933779950112 |
September 1995
3
Philips Semiconductors
Product specication
NPN 4 GHz wideband transistor
BFQ136
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. Measured with emitter and base grounded.
2. GUM is the maximum unilateral power gain, assuming S12 is zero and
3. dim = 60 dB; IC = 500 mA; VCE = 15 V; RL =75 ; Tamb =25 °C;
Vp =Vo at dim = 60 dB; fp = 795.25 MHz;
Vq =Vo 6 dB; fq = 803.25 MHz;
Vr =Vo 6 dB; fr = 805.25 MHz;
measured at f(p+qr) = 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
V
VCEO
collector-emitter voltage
open base
18
V
VEBO
emitter-base voltage
open collector
2V
IC
DC collector current
600
mA
Ptot
total power dissipation
up to Tc = 100 °C
9W
Tstg
storage temperature
65
150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-c
thermal resistance from junction to case
11 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 15 V
75
A
hFE
DC current gain
IC = 500 mA; VCE = 15 V
25
75
Cc
collector capacitance
IE =ie = 0; VCB = 15 V; f = 1 MHz
7.0
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
40
pF
Cre
feedback capacitance
IC = 0; VCE = 15 V; f = 1 MHz
4.0
pF
Ccs
collector-stud capacitance
note 1
0.8
pF
fT
transition frequency
IC = 500 mA; VCE = 15 V;
f = 500 MHz
4.0
GHz
GUM
maximum unilateral power gain
(note 2)
IC = 500 mA; VCE = 15 V;
f = 800 MHz; Tamb =25 °C
12.5
dB
Vo
output voltage (see Fig.2)
note 3
2.5
V
G
UM
10 log
S
21
2
1S
11
2
–
1S
22
2
–
--------------------------------------------------------------
dB.
=
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