參數(shù)資料
型號(hào): 933812280115
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 0.6 A, 200 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, 100H03, 2 PIN
文件頁數(shù): 8/14頁
文件大小: 102K
代理商: 933812280115
1999 Nov 16
3
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYD37 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.11.
For more information please refer to the
“General Part of associated Handbook”.
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to
surge; inductive load switched off
BYD37D to J
10
mJ
BYD37K and M
7mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Fig.7
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max;
see Fig.8
1.1
V
IF =1A;
see Fig.8
1.3
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD37D
300
V
BYD37G
500
V
BYD37J
700
V
BYD37K
900
V
BYD37M
1100
V
IR
reverse current
VR =VRRMmax; see Fig.9
1
A
VR =VRRMmax;
Tj = 165 °C; see Fig.9
100
A
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25A;
see Fig.12
BYD37D to J
250
ns
BYD37K and M
300
ns
Cd
diode capacitance
f = 1 MHz; VR =0;
see Fig.10
20
pF
maximum slope of reverse recovery
current
when switched from
IF =1AtoVR ≥ 30 V and
dIF/dt = 1A/s;
see Fig.13
BYD37D to J
6A/
s
BYD37K and M
5A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
30
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
150
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
dI
R
dt
--------
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