參數(shù)資料
型號(hào): 933812290115
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 0.6 A, 400 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, 100H03, 2 PIN
文件頁數(shù): 7/14頁
文件大?。?/td> 102K
代理商: 933812290115
1999 Nov 16
2
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYD37 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
Smallest surface mount rectifier
outline
Shipped in 8 mm embossed tape.
DESCRIPTION
Cavity free cylindrical glass package
through Implotec
(1) technology.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
(1) Implotec is a trademark of Philips.
handbook, 4 columns
MAM061
ka
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
BYD37D
200
V
BYD37G
400
V
BYD37J
600
V
BYD37K
800
V
BYD37M
1000
V
VR
continuous reverse voltage
BYD37D
200
V
BYD37G
400
V
BYD37J
600
V
BYD37K
800
V
BYD37M
1000
V
IF(AV)
average forward current
Ttp = 105 °C; see Fig.2;
averaged over any 20 ms period;
see also Fig.6
1.5
A
IF(AV)
average forward current
Tamb =60 °C; PCB mounting (see
Fig.11); see Fig.3;
averaged over any 20 ms period;
see also Fig.6
0.6
A
IFRM
repetitive peak forward current
Ttp = 105 °C; see Fig.4
13
A
Tamb =60 °C; see Fig.5
5.5
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj =Tj max
prior to surge; VR =VRRMmax
20
A
相關(guān)PDF資料
PDF描述
933812310115 0.6 A, 800 V, SILICON, SIGNAL DIODE
933812320115 0.6 A, 1000 V, SILICON, SIGNAL DIODE
933812300115 0.6 A, 600 V, SILICON, SIGNAL DIODE
933812330135 0.85 A, 50 V, SILICON, SIGNAL DIODE
933812350115 0.85 A, 150 V, SILICON, SIGNAL DIODE
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