參數(shù)資料
型號(hào): 933812300115
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述: 0.6 A, 600 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, 100H03, 2 PIN
文件頁(yè)數(shù): 9/14頁(yè)
文件大?。?/td> 102K
代理商: 933812300115
1999 Nov 16
4
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYD37 series
GRAPHICAL DATA
a = 1.42; VR =VRRMmax; δ = 0.5.
Switched mode application.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
3
0
1
2
MGA854
100
I F(AV)
(A)
T
( C)
o
tp
a = 1.42; VR =VRRMmax; δ = 0.5.
Device mounted as shown in Fig.11.
Switched mode application.
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
handbook, halfpage
0
200
0.8
0
MGA855
100
I F(AV)
(A)
T
( C)
amb
o
0.6
0.4
0.2
handbook, full pagewidth
0
8
10 2
110
10 2
10 3
10 4
MLB268
16
t
(ms)
p
10 1
I FRM
(A)
4
12
δ = 0.05
0.2
0.1
0.5
1
Ttp = 105 °C; Rth j-tp = 30 K/W.
VRRMmax during 1 δ; curves include derating for Tj max at VRRM = 1000 V.
Fig.4 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
相關(guān)PDF資料
PDF描述
933812330135 0.85 A, 50 V, SILICON, SIGNAL DIODE
933812350115 0.85 A, 150 V, SILICON, SIGNAL DIODE
933812350135 0.85 A, 150 V, SILICON, SIGNAL DIODE
933812390115 0.8 A, 400 V, SILICON, SIGNAL DIODE
933812380115 0.8 A, 300 V, SILICON, SIGNAL DIODE
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