參數(shù)資料
型號(hào): 933812330115
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述: 0.85 A, 50 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, SMD, 2 PIN
文件頁數(shù): 9/12頁
文件大?。?/td> 82K
代理商: 933812330115
1999 Nov 15
6
Philips Semiconductors
Product specication
Ultra fast low-loss
controlled avalanche rectiers
BYD77 series
handbook, full pagewidth
MCD593
10
-1
10
0
10
1
10
2
10
3
10
4
t p (ms )
10
-2
20
0
10
(A)
I FRM
0.5
1
δ =
0.05
0.1
0.2
BYD77A to D
Ttp = 105 °C; Rth j-tp = 30 K/W.
VRRMmax during 1 δ; curves include derating for Tj max at VRRM = 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
MCD591
10
-1
10
0
10
1
10
2
10
3
10
4
t p (ms )
10
-2
20
0
10
(A)
I FRM
0.5
1
0.2
0.1
δ =
0.05
BYD77E to G
Ttp = 105°C; Rth j-tp = 30 K/W.
VRRMmax during 1 δ; curves include derating for Tj max at VRRM = 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
相關(guān)PDF資料
PDF描述
933812340115 0.85 A, 100 V, SILICON, SIGNAL DIODE
933812340135 0.85 A, 100 V, SILICON, SIGNAL DIODE
933812360135 0.85 A, 200 V, SILICON, SIGNAL DIODE
933812390135 0.8 A, 400 V, SILICON, SIGNAL DIODE
933812360115 0.85 A, 200 V, SILICON, SIGNAL DIODE
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