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參數(shù)資料
| 型號(hào)： | 933812350115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 0.85 A, 150 V, SILICON, SIGNAL DIODE |
| 封裝： | HERMETIC SEALED, GLASS, SMD, 2 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 82K |
| 代理商： | 933812350115 |
1999 Nov 15
3
Philips Semiconductors
Product specication
Ultra fast low-loss
controlled avalanche rectiers
BYD77 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
IFRM
repetitive peak forward current
Ttp = 105 °C; see Figs 6 and 7
BYD77A to D
15
A
BYD77E to G
13
A
IFRM
repetitive peak forward current
Tamb =60 °C; see Figs 8 and 9
BYD77A to D
8.5
A
BYD77E to G
8.0
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj =Tj max
prior to surge; VR =VRRMmax
25
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =25 °C prior to
surge; inductive load switched off
10
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 1 A; Tj =Tj max;
see Figs 12 and 13
BYD77A to D
0.75
V
BYD77E to G
0.83
V
VF
forward voltage
IF =1A;
see Figs 12 and 13
BYD77A to D
0.98
V
BYD77E to G
1.05
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYD77A
55
V
BYD77B
110
V
BYD77C
165
V
BYD77D
220
V
BYD77E
275
V
BYD77F
330
V
BYD77G
440
V
IR
reverse current
VR =VRRMmax;
see Fig.14
1
A
VR =VRRMmax;
Tj = 165 °C; see Fig.14
100
A
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A;
see Fig.18
BYD77A to D
25
ns
BYD77E to G
50
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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|---|---|
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