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參數(shù)資料
| 型號： | 933818480133 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2.08 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 70K |
| 代理商： | 933818480133 |
1996 May 24
3
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYM26 series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
IFRM
repetitive peak forward current
Ttp =55 °C; see Figs 6 and 7
BYM26A to E
19
A
BYM26F and G
21
A
IFRM
repetitive peak forward current
Tamb =65 °C; see Figs 8 and 9
BYM26A to E
8.0
A
BYM26F and G
8.5
A
IFSM
non-repetitive peak forward current
t = 10 ms half sine wave; Tj =Tj max
prior to surge; VR =VRRMmax
45
A
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj =Tj max prior to surge;
inductive load switched off
10
mJ
Tstg
storage temperature
65
+175
°C
Tj
junction temperature
see Figs 12 and 13
65
+175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 2 A; Tj =Tj max;
see Figs 14 and 15
BYM26A to E
1.34
V
BYM26F and G
1.34
V
VF
forward voltage
IF =2A;
see Figs 14 and 15
BYM26A to E
2.65
V
BYM26F and G
2.30
V
V(BR)R
reverse avalanche breakdown
voltage
IR = 0.1 mA
BYM26A
300
V
BYM26B
500
V
BYM26C
700
V
BYM26D
900
V
BYM26E
1100
V
BYM26F
1300
V
BYM26G
1500
V
IR
reverse current
VR =VRRMmax;
see Fig.16
10
A
VR =VRRMmax;
Tj = 165 °C; see Fig.16
150
A
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A;
see Fig.20
BYM26A to C
30
ns
BYM26D and E
75
ns
BYM26F and G
150
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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