參數(shù)資料
型號： 933821850215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 300 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SST3, 3 PIN
文件頁數(shù)： 3/8頁
文件大?。?/td> 43K
代理商： 933821850215
1999 Apr 15
3
Philips Semiconductors
Product specication
PNP high-voltage transistor
PMBT5401
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 120 V
50
nA
IE = 0; VCB = 120 V; Tamb = 150 °C
50
A
IEBO
emitter cut-off current
IC = 0; VEB = 4V
50
nA
hFE
DC current gain
VCE = 5 V; (see Fig.2)
IC = 1mA
50
IC = 10 mA
60
240
IC = 50 mA
50
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 1mA
200
mV
IC = 50 mA; IB = 5mA
500
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1mA
1V
IC = 50 mA; IB = 5mA
1V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
6pF
fT
transition frequency
IC = 10 mA; VCE = 10 V;
f = 100 MHz; Tamb =25 °C
100
300
MHz
F
noise gure
IC = 200 A; VCE = 5 V; RS =2k;
f = 10 Hz to 15.7 kHz; Tamb =25 °C
8dB
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PDF描述
933821850235 300 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR
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