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參數(shù)資料
| 型號(hào)： | 933864360215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 67K |
| 代理商： | 933864360215 |
2002 Oct 04
3
Philips Semiconductors
Product specication
NPN switching transistor
MMBT3904
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =30V
50
nA
IEBO
emitter cut-off current
IC = 0; VEB =6V
50
nA
hFE
DC current gain
VCE = 1 V; see Fig.2; note 1
IC = 0.1 mA
60
IC = 1 mA
80
IC = 10 mA
100
300
IC =50mA
60
IC = 100 mA
30
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB =1mA
200
mV
IC = 50 mA; IB =5mA
300
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 1 mA
650
850
mV
IC = 50 mA; IB =5mA
950
mV
Cc
collector capacitance
IE =ie = 0; VCB =5V; f=1MHz
4pF
Ce
emitter capacitance
IC =ic = 0; VBE = 500 mV;
f = 1 MHz
8pF
fT
transition frequency
IC = 10 mA; VCE =20V;
f = 100 MHz
300
MHz
F
noise gure
IC = 100 A; VCE =5V; RS =1k;
f = 10 Hz to 15.7 kHz
5dB
Switching times (between 10% and 90% levels); see Fig.3
td
delay time
ICon = 10 mA; IBon = 1 mA;
IBoff = 1mA
35
ns
tr
rise time
35
ns
ts
storage time
200
ns
tf
fall time
50
ns
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