參數(shù)資料
型號(hào)： 933912920215
廠商： NXP SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET
封裝： SMD, SST3, 3 PIN
文件頁(yè)數(shù)： 8/12頁(yè)
文件大小： 100K
代理商： 933912920215
1996 Jul 29
5
Philips Semiconductors
Product specication
N-channel silicon junction
eld-effect transistors
BF545A; BF545B; BF545C
DYNAMIC CHARACTERISTICS
Tamb =25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
UNIT
Cis
input capacitance
VDS =15V; VGS = 10 V; f = 1 MHz
1.7
pF
VDS =15V; VGS = 0; f = 1 MHz
3
pF
Crs
reverse transfer capacitance
VDS =15V; VGS = 10 V; f = 1 MHz
0.8
pF
VDS =15V; VGS = 0; f = 1 MHz
0.9
pF
gis
common source input conductance VDS =10V; ID = 1 mA; f = 100 MHz
15
S
VDS =10V; ID = 1 mA; f = 450 MHz
300
S
gfs
common source transfer
conductance
VDS =10V; ID = 1 mA; f = 100 MHz
2
mS
VDS =10V; ID = 1 mA; f = 450 MHz
1.8
mS
grs
common source reverse
conductance
VDS =10V; ID = 1 mA; f = 100 MHz
6
S
VDS =10V; ID = 1 mA; f = 450 MHz
40
S
gos
common source output
conductance
VDS =10V; ID = 1 mA; f = 100 MHz
30
S
VDS =10V; ID = 1 mA; f = 450 MHz
60
S
Fig.3
Drain current as a function of gate-source
cut-off voltage; typical values.
VDS = 15 V; Tj =25 °C.
handbook, halfpage
0
30
20
10
0
2
4
8
6
MBB467
IDSS
(mA)
VGSoff (V)
Fig.4
Forward transfer admittance as a
function of gate-source cut-off voltage;
typical values.
VDS = 15 V; VGS = 0; Tj =25 °C.
handbook, halfpage
0
6
5
4
2
4
8
MBB466
6
VGSoff (V)
Yfs
(mS)
相關(guān)PDF資料
PDF描述
933917350135 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
933917350115 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
0561934128 BRASS, WIRE TERMINAL
933917370115 50 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR
933917360115 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
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