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參數(shù)資料
| 型號： | 933919910115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 91K |
| 代理商： | 933919910115 |
1999 Aug 24
2
Philips Semiconductors
Product specication
NPN 4 GHz wideband transistor
BFG35
DESCRIPTION
NPN planar epitaxial transistor
mounted in a plastic SOT223
envelope, intended for wideband
amplifier applications. It features high
output voltage capabilities.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
page
4
123
MSB002 - 1
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCEO
collector-emitter voltage
open base
18
V
IC
DC collector current
150
mA
Ptot
total power dissipation
up to Ts = 135 °C (note 1)
1W
hFE
DC current gain
IC = 100 mA; VCE = 10 V; Tj =25 °C25
70
fT
transition frequency
IC = 100 mA; VCE =10V;
f = 500 MHz; Tamb =25 °C
4
GHz
GUM
maximum unilateral power gain IC = 100 mA; VCE =10V;
f = 500 MHz; Tamb =25 °C
15
dB
IC = 100 mA; VCE =10V;
f = 800 MHz; Tamb =25 °C
11
dB
Vo
output voltage
IC = 100 mA; VCE =10V;
dim = 60 dB; RL =75 ;
f(p+qr) = 793.25 MHz; Tamb =25 °C
750
mV
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
V
VCEO
collector-emitter voltage
open base
18
V
VEBO
emitter-base voltage
open collector
2V
IC
DC collector current
150
mA
Ptot
total power dissipation
up to Ts = 135 °C (note 1)
1W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
175
°C
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