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| 型號(hào)： | 933981790126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 200 mA, 250 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SPT, SOT-54 VARIANT, 3 PIN |
| 文件頁(yè)數(shù)： | 7/12頁(yè) |
| 文件大小： | 76K |
| 代理商： | 933981790126 |
April 1995
4
Philips Semiconductors
Product specication
P-channel enhancement mode vertical
D-MOS transistor
BSP254; BSP254A
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Notes
1. Measured at f = 1 MHz;
VDS = 25 V; VGS =0.
2.
VGS = 0 to 10 V; ID = 250 mA; VDD = 50 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0
ID =10 A
250
V
I
DSS
drain-source leakage current
VDS = 200 V
VGS =0
1
A
±IGSS
gate-source leakage current
±VGS = 20 V
VDS =0
100
nA
V
GS(th)
gate-source threshold voltage
VGS = VDS
ID = 1 mA
0.8
2.8
V
RDS(on)
drain-source on-resistance
VGS = 10 V
ID = 200 mA;
10
15
Y
fs
transfer admittance
VDS = 25 V
ID = 200 mA
100
200
mS
Ciss
input capacitance
note 1
65
90
pF
Coss
output capacitance
note 1
20
30
pF
Crss
feedback capacitance
note 1
615
pF
ton
turn-on time
note 2
510
ns
toff
turn-off time
note 2
20
30
ns
Fig.3 Switching times test circuit.
handbook, halfpage
MBB689
50
VDD = 50 V
ID
0 V
10 V
Fig.4 Input and output waveforms.
handbook, halfpage
MBB690
10 %
90 %
10 %
ton
toff
OUTPUT
INPUT
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