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參數(shù)資料
| 型號(hào)： | 933982080115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 43K |
| 代理商： | 933982080115 |
1999 Apr 14
3
Philips Semiconductors
Product specication
PNP high-voltage transistor
PZTA92
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
104
K/W
Rth j-s
thermal resistance from junction to soldering point
23
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 200 V
20
nA
IEBO
emitter cut-off current
IC = 0; VBE = 5V
100
nA
hFE
DC current gain
IC = 1 mA; VCE = 10 V; note 1
25
IC = 10 mA; VCE = 10 V; note 1
40
IC = 30 mA; VCE = 10 V; note 1
25
VCEsat
collector-emitter saturation
voltage
IC = 20 mA; IB = 2mA
500
mV
VBEsat
base-emitter saturation voltage
IC = 20 mA; IB = 2mA
900
mV
Cc
collector capacitance
IE = 0; VCB = 20 V; f = 1 MHz
6pF
fT
transition frequency
IC = 10 mA; VCE = 20 V; f = 100 MHz
50
MHz
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