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參數(shù)資料
| 型號： | 933983400115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 0.05 A, 350 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 933983400115 |
1999 Jun 01
2
Philips Semiconductors
Product specication
NPN high-voltage transistors
BSP19; BSP20
FEATURES
Low current (max. 100 mA)
High voltage (max. 350 V).
APPLICATIONS
Switching and amplification
Especially used in telephony and automotive
applications.
DESCRIPTION
NPN transistor in a SOT223 plastic package.
PNP complement: BSP16.
PINNING
PIN
DESCRIPTION
1
base
2, 4
collector
3
emitter
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
12
3
MAM287
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BSP19
400
V
BSP20
300
V
VCEO
collector-emitter voltage
open base
BSP19
350
V
BSP20
250
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
IB
base current (DC)
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
1.2
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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