參數(shù)資料
型號: 933983410115
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: 0.05 A, 250 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTC, SMD, SC-73, 4 PIN
文件頁數(shù): 3/8頁
文件大?。?/td> 42K
代理商: 933983410115
1999 Jun 01
3
Philips Semiconductors
Product specication
NPN high-voltage transistors
BSP19; BSP20
THERMAL CHARACTERISTICS
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
104
K/W
Rth j-s
thermal resistance from junction to soldering point
23
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCE = 300 V
20
nA
IEBO
emitter cut-off current
IC = 0; VEB =5V
100
nA
hFE
DC current gain
VCE =10V; IC =20mA
40
VCEsat
collector-emitter saturation voltage
IC = 50 mA; IB =4mA
0.5
V
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
2.5
pF
fT
transition frequency
VCE =10V; IC = 10 mA; f = 100 MHz 70
MHz
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