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參數(shù)資料
| 型號： | 933984380602 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | SRAM |
| 英文描述： | 16 X 4 STANDARD SRAM, 8 ns, PDIP16 |
| 封裝： | 0.300 INCH, PLASTIC, MO-001AE, SOT-38-1, DIP-16 |
| 文件頁數(shù)： | 5/15頁 |
| 文件大?。?/td> | 155K |
| 代理商： | 933984380602 |
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Product Information
74F219A; 64-bit TTL
bipolar RAM,
non-inverting
(3-State)
Information as of 2003-04-22
Stay informed
Download datasheet
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General description
The 74F219A is a high speed, 64–bit RAM organized as a 16–word by 4–bit array. Address inputs are
buffered to minimize loading and are fully decoded on chip. The outputs are in high impedance state whenever
the chip enable (CE) is high. The outputs are active only in the READ mode (WE = high) and the output data
is the complement of the stored data.
Features
High speed performance
q
Replaces 74F219
q
Address access time: 8ns max vs 28ns for 74F219
q
Power dissipation: 4.3mW/bit typ
q
Schottky clamp TTL
q
One chip enable
q
Non–Inverting outputs (for inverting outputs see 74F189A)
q
3–state outputs
q
74F219A in 150 mil wide SO is preferred options for new designs
q
C3F219A in 300 mil wide SOL replaces 74F219 in existing designs
q
Philips Semiconductors - PIP - 74F219A; 64-bit TTL bipolar RAM, non-inverting (3-State)
file:///G|/imaging/BITTING/CPL/20030424/04232003_9/PHGL/_HTML04232003/N74F219AN.html (1 of 3) [5ay-14-2003 9:45:01 AM]
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