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參數(shù)資料
| 型號： | 933994050114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 8/14頁 |
| 文件大小： | 119K |
| 代理商： | 933994050114 |
1997 Feb 20
3
Philips Semiconductors
Product specication
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
65
V
VCES
collector-emitter voltage
RBE =0
60
V
VCEO
collector-emitter voltage
open base
20
V
VEBO
emitter-base voltage
open collector
3V
IC
collector current (DC)
tp ≤ 10 s; δ≤ 10 %
6A
Ptot
total power dissipation
(peak power)
tp ≤ 10 s; δ≤ 10 %;
Tmb =75 °C
290
W
Tstg
storage temperature
65
+200
°C
Tj
operating junction temperature
200
°C
Tsld
soldering temperature
up to 0.2 mm from ceramic;
t
≤ 10 s
235
°C
Fig.3
Maximum power dissipation derating as a
function of mounting-base temperature.
tp =10 s; δ = 10 %; Ptot max = 290 W.
handbook, halfpage
50
200
300
0
100
200
0
Ptot
(W)
100
Tmb (°C)
MGL046
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