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參數資料
| 型號： | 934022860135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3 |
| 文件頁數： | 2/6頁 |
| 文件大?。?/td> | 46K |
| 代理商： | 934022860135 |
1995 Sep 04
2
Philips Semiconductors
Product specication
NPN 1 GHz wideband transistor
BFS17W
APPLICATIONS
Primarily intended as a mixer,
oscillator and IF amplifier in UHF and
VHF tuners.
DESCRIPTION
Silicon NPN transistor in a plastic
SOT323 (S-mini) package. The
BFS17W uses the same crystal as
the SOT23 version, BFS17.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 SOT323
handbook, 2 columns
3
12
MBC870
Top view
Marking code: E1
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector pin.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
25
V
VCEO
collector-emitter voltage
15
V
IC
DC collector current
50
mA
Ptot
total power dissipation
up to Ts =118 °C; note 1
300
mW
hFE
DC current gain
IC = 2 mA; VCE = 1 V
25
90
fT
transition frequency
IC = 25 mA; VCE =5V
1.6
GHz
Cc
collector capacitance
IE = 0; VCB = 10 V; f = 1 MHz
0.8
1.5
pF
Cre
feedback capacitance
IC = 1 mA; VCE =5V; f=1MHz
0.75
pF
Tj
junction temperature
175
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
25
V
VCEO
collector-emitter voltage
open base
15
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
collector current (DC)
50
mA
Ptot
total power dissipation
Ts =118 °C; note 1
300
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
175
°C
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