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參數(shù)資料
| 型號(hào)： | 934022990215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大?。?/td> | 105K |
| 代理商： | 934022990215 |
1998 Oct 02
2
Philips Semiconductors
Product specication
NPN 5 GHz wideband transistors
BFG590; BFG590/X
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures excellent reliability.
APPLICATIONS
MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
MARKING
TYPE NUMBER
CODE
BFG590
N38
BFG590/X
N44
PINNING
PIN
DESCRIPTION
BFG590
BFG590/X
1
collector
2
base
emitter
3
emitter
base
4
emitter
Fig.1 Simplified outline SOT143B.
handbook, 2 columns
Top view
MSB014
12
3
4
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
IC
collector current (DC)
200
mA
Ptot
total power dissipation
Ts ≤ 60 °C
400
mW
hFE
DC current gain
IC = 35 mA; VCE = 8 V
5090280
Cre
feedback capacitance
IC = 0; VCE =8V; f=1MHz
0.7
pF
fT
transition frequency
IC = 80 mA; VCE =4V; f=1GHz
5
GHz
GUM
maximum unilateral power gain
IC = 80 mA; VCE =4V;
f = 900 MHz; Tamb =25 °C
13
dB
|S21|2
insertion power gain
IC = 80 mA; VCE =4V;
f = 900 MHz; Tamb =25 °C
11
dB
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