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參數(shù)資料
| 型號(hào)： | 934023010115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-73, 4 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 106K |
| 代理商： | 934023010115 |
1995 Sep 04
2
Philips Semiconductors
Product specication
NPN 7 GHz wideband transistor
BFG591
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
Intended for applications in the GHz
range such as MATV or CATV
amplifiers and RF communications
subscriber equipment.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic, 4-pin SOT223 package.
PINNING
PIN
DESCRIPTION
1
emitter
2
base
3
emitter
4
collector
Fig.1 SOT223.
fpage
4
123
MSB002 - 1
Top view
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
15
V
IC
collector current (DC)
200
mA
Ptot
total power dissipation
up to Ts =80 °C; note 1
2W
hFE
DC current gain
IC = 70 mA; VCE = 8 V
60
90
250
Cre
feedback capacitance
IC =Ic = 0; VCE = 12 V; f = 1 MHz
0.7
pF
fT
transition frequency
IC = 70 mA; VCE =12V; f=1GHz
7
GHz
GUM
maximum unilateral
power gain
IC = 70 mA; VCE =12V;
f = 900 MHz; Tamb =25 °C
13
dB
insertion power gain
IC = 70 mA; VCE =12V;
f = 900 MHz; Tamb =25 °C
12
dB
s
21
2
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