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參數(shù)資料
| 型號： | 934023500135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 350 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-73, 4 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 74K |
| 代理商： | 934023500135 |
2001 Dec 11
5
Philips Semiconductors
Product specication
N-channel enhancement mode
vertical D-MOS transistor
BSP130
handbook, halfpage
0
1.2
0.8
VDS (V)
ID
(A)
0.4
0
48
12
MLD766
4 V
3.5 V
3 V
2 V
5 V
2.5 V
VGS = 10 V
Fig.6 Typical output characteristics.
Tj =25 °C.
handbook, halfpage
010
1.2
0
0.4
0.8
2
ID
(A)
VGS (V)
468
MLD767
Fig.7 Typical transfer characteristics.
VDS = 10 V; Tj =25 °C.
handbook, halfpage
30
10
0
20
MLD768
101
110
ID (A)
RDSon
(
)
3 V
3.5 V
4 V
10 V
2.5 V
5 V
VGS = 2 V
Fig.8
Drain-source on-state resistance as a
function of drain current; typical values.
Tj =25 °C.
handbook, halfpage
02
10
20
15
5
0
10
4
VGS (V)
RDSon
(
)
68
MLD769
Fig.9
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
VDS = 100 mV; Tj =25 °C.
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