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參數(shù)資料
| 型號： | 934023530126 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 250 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 162K |
| 代理商： | 934023530126 |
April 1995
3
Philips Semiconductors
Product specication
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL RESISTANCE
Note
1. Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead
minimum 10 mm x 10 mm.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
300
V
±VGSO
gate-source voltage
open drain
20
V
ID
DC drain current
250
mA
IDM
peak drain current
1A
Ptot
total power dissipation
up to Tamb = 25 °C; note 1
1W
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-a
from junction to ambient; note 1
125 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
V(BR)DSS
drain-source breakdown voltage
ID = 10 A; VGS = 0
300
V
±I
GSS
gate-source leakage current
±VGS = 20 V; VDS = 0
100
nA
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS = VGS
0.8
2V
RDS(on)
drain-source on-resistance
ID = 250 mA; VGS = 10 V
6.7
8
ID = 20 mA; VGS = 2.4 V
7.9
14
IDSS
drain-source leakage current
VDS = 240 V; VGS = 0
100
nA
Y
fs
transfer admittance
ID = 250 mA; VDS = 25 V
200
380
mS
Ciss
input capacitance
VDS = 25 V; VGS = 0;
f = 1 MHz
57
90
pF
Coss
output capacitance
VDS = 25 V; VGS = 0;
f = 1 MHz
15
30
pF
Crss
feedback capacitance
VDS = 25 V; VGS = 0;
f = 1 MHz
2.6
15
pF
Switching times (see Figs 2 and 3)
ton
turn-on time
ID = 250 mA; VDD = 50 V;
VGS = 0 to 10 V
2.5
10
ns
toff
turn-off time
ID = 250 mA; VDD = 50 V;
VGS = 10 to 0 V
17
30
ns
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